SUNFUN Group specializes in intelligent and sustainable industrial development. Driving quality advancement in manufacturing across China and the globe through technological innovation, we are committed to creating green value for a better human life.
We have deep expertise in smart energy and smart manufacturing, consistently achieving breakthroughs in precision production. Our capabilities range from 0.001-mm precision machining to the manufacture of components weighing from 0.1 grams to 150 tons. We maintain energy consumption within 0.1% and implement fully intelligent process management—all supported by four decades of specialized experience!
Innovation is the foundation of the growth of our group. We have built an open and collaborative innovation ecosystem, partnering with governments, enterprises, universities, and institutions to enable cooperative innovation and shared value, injecting sustained momentum into the industry.<br/>
As an accredited technology enterprise with its own institute and talent academy, SUNFUN has completed more than ten national-level R&D tasks and undertaken major projects commissioned by agencies such as the NDRC, MOST, and MIIT.
Application fields
General semiconductor, wafer substrate, STI, ILD, barrier layer, copper polishing, etc.
Product features
Nanoparticles, normal distribution, low impurities.
Good dispersion and good suspension properties.
The wafers and integrated circuits after polishing have low scratch marks, good surface roughness and are easy to clean.
Product specifications
Cerium oxide polishing liquid
Silicon dioxide polishing liquid
Aluminum oxide polishing liquid
Customized according to the customer's usage requirements.
CMP polishing slurry product - CeO2
Nanometer CeO2 products of different size specifications, including 50nm, 100nm, 200nm and 300-400nm.

Modified nano CeO2 series products

CMP polishing slurry products - SiO2 + Fe3O4

CMP polishing slurry product - Al2O3

CMP polishing liquid products - dispersion and suspension control

| Test item (1% solid content dispersion) | Unit | Measured value | |
| Particle size distribution | Dmax | um | ≤0.4 |
| D50 | um | 0.12-0.19 | |
| Impurity ions | Na | ppm | <1 |
| K | ppm | <1 | |
| Al | ppm | <1 | |
| Fe | ppm | <1 | |
| Cr | ppm | <1 | |
| Mg | ppm | <1 | |
| Ni | ppm | <1 | |
| Cu | ppm | <1 | |
| Zn | ppm | <1 | |
| 20%CeO₂ | ||||||
| Dispersant | Dispersant OBS | Dispersant CMC-Na | ||||
| Dispersant concentration | 0.10% | 0.20% | 0.40% | 0.50% | 1.0% | 2.0% |
| pH | zeta potential | |||||
| 7 | -44.8 | -45 | -43.7 | -45.4 | -43.2 | -42.2 |
| 6 | -41.7 | -42.9 | -39 | -37.8 | -41.8 | -39.4 |
| 5 | -33.2 | -36 | -37.4 | -29.2 | -28.7 | -27.7 |
| 4 | -29.7 | -28 | -28.8 | -25.7 | -26.9 | -30.8 |
| 3 | -25.4 | -20.9 | -25.3 | -13.3 | -24.9 | -17.9 |











