English
SUNFUN Group specializes in intelligent and sustainable industrial development. Driving quality advancement in manufacturing across China and the globe through technological innovation, we are committed to creating green value for a better human life.
We have deep expertise in smart energy and smart manufacturing, consistently achieving breakthroughs in precision production. Our capabilities range from 0.001-mm precision machining to the manufacture of components weighing from 0.1 grams to 150 tons. We maintain energy consumption within 0.1% and implement fully intelligent process management—all supported by four decades of specialized experience!
Innovation is the foundation of the growth of our group. We have built an open and collaborative innovation ecosystem, partnering with governments, enterprises, universities, and institutions to enable cooperative innovation and shared value, injecting sustained momentum into the industry.<br/>
As an accredited technology enterprise with its own institute and talent academy, SUNFUN has completed more than ten national-level R&D tasks and undertaken major projects commissioned by agencies such as the NDRC, MOST, and MIIT.
For Packaging, MEMS, Power/Compound Semiconductor
The equipment employs high-precision temperature and pressure control technology to achieve high-strength permanent wafer bonding, supporting multiple process applications (such as eutectic, anodic, and adhesive bonding). It is suitable for advanced packaging, MEMS, and 3D integration, ensuring low stress and high alignment accuracy.
Features
● Meet SEMI S2,F47 Standards
● Adjustable to Various Bonding Processes
● High Bonding Temperature, High Bonding Pressure, High Vacuum
● High Precision Temperature Control
● High Precision Contract Force Control
● 8”/12”,6”/8” Compatible
● Thick Wafer Compatible
● Adaptive Chuck to Avoid Wafers Damage
● Multiple Reactant Gas Channels for Various Bonding Processes
● For Anodic Bonding, Eutectic Bonding, and Adhesive Bonding processes
Specifications
|
Description |
Specifications |
|
Substrate Diameter |
100mm/150mm/200mm/300mm |
|
Max Bonding Pressure |
20KN、60KN(optional)、100KN(optional) |
|
Max Bonding Temperature |
300℃、550℃ |
|
Max Vacuum |
1X0 mbar、1X10⁶mbar(optional) |
|
Pressure Fluctuation |
<2% |
|
Temperature Accuracy |
≤±1℃ |
|
Temperature Uniformity |
≤1.5%F.S. |
|
Max Heating Rate |
30℃/min |
|
Max Cooling Rate |
20℃/min |
|
Alignment Accuracy |
500nm(Mean+3σ) |
|
Misalignment |
5um(OVL result) |
|
Throughput |
1对/小时(Not include the time for maintaining pressure and temperature) |
