English
SUNFUN Group specializes in intelligent and sustainable industrial development. Driving quality advancement in manufacturing across China and the globe through technological innovation, we are committed to creating green value for a better human life.
We have deep expertise in smart energy and smart manufacturing, consistently achieving breakthroughs in precision production. Our capabilities range from 0.001-mm precision machining to the manufacture of components weighing from 0.1 grams to 150 tons. We maintain energy consumption within 0.1% and implement fully intelligent process management—all supported by four decades of specialized experience!
Innovation is the foundation of the growth of our group. We have built an open and collaborative innovation ecosystem, partnering with governments, enterprises, universities, and institutions to enable cooperative innovation and shared value, injecting sustained momentum into the industry.<br/>
As an accredited technology enterprise with its own institute and talent academy, SUNFUN has completed more than ten national-level R&D tasks and undertaken major projects commissioned by agencies such as the NDRC, MOST, and MIIT.
For Production of Advanced Substrates
The system is designed for advanced substrate production, including SOI (Silicon-on-Insulator)and POI (Piezoelectric-on-Insulator). Featuring plasma surface treatment and low-temperature bonding technology, it enables ultrathin layer transfer with superior interface quality. Ideal for 5G, RF devices, and MEMS manufacturing, delivering high uniformity and low defect rates for mass production.
Features
● Meet SEMI S2,F47 Standards
● ISO Class 1 Mini Environment
● Modular Design&Low Maintenance Cost
● Compact Size, Small Footprint
● Customizable Cleaning Unit
● Optional Vacuum Bonding Chamber
● Highly Customizable
● 8”/12”,6”/8” Compatible
● Plasma Activation Unit
● Contaminant-free Backside Treatment
● Optional Two-phase Flow/Brush/Mega-sonic Cleaning Functions
● Ready for Si/SiC/LT Heterogeneous Bonding
Specifications
|
Description |
Specifications |
|
Substrate Diameter |
150/200/300 mm |
|
Alignment Accuracy |
X和Y:±100μm,θ:±0.1° |
|
Bonding Pressure |
Max:5N,±10% |
|
Initial Bonding Position |
From Edge to Center |
|
Defect |
0.5mm |
|
Metal |
Ca,Ni,Fe,Cu,Al,Mg,Cr,K,Na,Mn, Zn,Ge,Mo,W,Ti<1e10 at/cm² |
|
Particle |
<[email protected](transfer only) <[email protected](clean only) <[email protected](plasma only) |
