English
SUNFUN Group specializes in intelligent and sustainable industrial development. Driving quality advancement in manufacturing across China and the globe through technological innovation, we are committed to creating green value for a better human life.
We have deep expertise in smart energy and smart manufacturing, consistently achieving breakthroughs in precision production. Our capabilities range from 0.001-mm precision machining to the manufacture of components weighing from 0.1 grams to 150 tons. We maintain energy consumption within 0.1% and implement fully intelligent process management—all supported by four decades of specialized experience!
Innovation is the foundation of the growth of our group. We have built an open and collaborative innovation ecosystem, partnering with governments, enterprises, universities, and institutions to enable cooperative innovation and shared value, injecting sustained momentum into the industry.<br/>
As an accredited technology enterprise with its own institute and talent academy, SUNFUN has completed more than ten national-level R&D tasks and undertaken major projects commissioned by agencies such as the NDRC, MOST, and MIIT.
Is a wafer-to-wafer fusion bonding equipment. This equipment can efficiently achieve non-electrical connections between wafers, naturally bonding two flat wafers together. Its key feature is that the wafers undergo hydrophilic treatment after cleaning and bond with each other at room temperature upon contact. FB UMA®wafer-to-wafer fusion bonding products can be used for low-stress fusion bonding of carrier wafers and device wafers, offering excellent production efficiency.
Features
● Meet SEMI S2,F47 Standards
● High Precision Alignment
● Fully Automated EFEM
● Edge Alignment Method
● High Precision Wafer Transfer System
● He Purge
● Low-Temperature Plasma Activation
● Bonding wave monitor
● Cleaning Unit
● Pre-bonding at Room Temperature
Specifications
|
Description |
Specifications |
|
Machine Series |
FB UMA®300 |
|
Substrate Diameter |
300mm |
|
Edge Alignment |
≤3um(3σ) |
|
Bonding Misalignment |
X/Y Within±15um |
|
Bond Distortion |
≤10nm(3σ) |
|
Post Litho Residual |
≤5nm(3σ) |
|
Throughput |
≥60WPH |
|
Environmental Control System |
IOS Class 1(partial) |
