English
SUNFUN Group specializes in intelligent and sustainable industrial development. Driving quality advancement in manufacturing across China and the globe through technological innovation, we are committed to creating green value for a better human life.
We have deep expertise in smart energy and smart manufacturing, consistently achieving breakthroughs in precision production. Our capabilities range from 0.001-mm precision machining to the manufacture of components weighing from 0.1 grams to 150 tons. We maintain energy consumption within 0.1% and implement fully intelligent process management—all supported by four decades of specialized experience!
Innovation is the foundation of the growth of our group. We have built an open and collaborative innovation ecosystem, partnering with governments, enterprises, universities, and institutions to enable cooperative innovation and shared value, injecting sustained momentum into the industry.<br/>
As an accredited technology enterprise with its own institute and talent academy, SUNFUN has completed more than ten national-level R&D tasks and undertaken major projects commissioned by agencies such as the NDRC, MOST, and MIIT.
A wafer hybrid bonding equipment. It is applied to memory, logic, and 3D chips. This equipment has undergone a technological upgrade, offering higher alignment accuracy and WPH, and is equipped with units for plasma activation, cleaning, bonding, and measurement. All performance indicators have reached the level of similar international products.
Features
● Meet SEMI S2,F47 Standards
● High Precision Alignment
● He Purge
● Fully Automated EFEM
● IRAlignment Method
● Bonding wave monitor
● High Precision Wafer Transfer System
● Pre-bonding at Room Temperature
● Low-Temperature Plasma Activation
● Alignment Verify Module
● Cleaning Unit
● Edge-Gripper type Debonding
Specifications
|
Description |
Specifications |
|
Machine Series |
HB UMA®300 |
|
Substrate Diameter |
300mm |
|
Alignment Accuracy |
≤10nm(3σ) |
|
Bonding Misalignment |
≤100nm(3σ) |
|
Bond Distortion |
≤50nm |
|
Post Litho Residual |
≤30nm(3σ) |
|
Throughput |
≥40WPH |
|
Environmental Control System |
IOS Class 1(partial) |
